642-NM ALGAINP LASER-DIODES WITH A TRIPLE TENSILE STRAIN BARRIER CLADDING LAYER

For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LD's), It was found that the TSBC layer s can provide a better optical confinement and a better carrier confin ement. AlGaInP LD's with and without the TSBC layers were both fabrica ted. It was found that the 48-mA threshold current of the 5 mu m x 800 mu m gain-guided triple TSBC AlGaInP LD is lower than the 56-mA thres hold current of the conventional AlGaInP LD with the same physical siz e. The characteristic temperature Tb of the triple TSBC AlGaInP LD (i. e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K ).