Resonant cavity enhanced (RCE) photodiodes are promising candidates fo
r applications in optical communications and interconnects where ultra
fast high-efficiency detection is desirable. We have designed and fabr
icated RCE Schottky photodiodes in the (Al, In) GaAs material system f
or 900-nm wavelength. The observed temporal response with 10-ps pulsew
idth was limited by the measurement setup and a conservative estimatio
n of the bandwidth corresponds to more than 100 GHz. A direct comparis
on of RCE versus conventional detector performance was performed by hi
gh speed measurements under optical excitation at resonant wavelength
(895 nm) and at 840 nm where the device functions as a single-pass con
ventional photodiode. A more than two-fold bandwidth enhancement with
the RCE detection scheme was demonstrated.