PHOTOLUMINESCENCE FROM SI-BASED SINXOY FILMS

Authors
LIAO LS LIU XB ZIONG ZH YUAN S HOU XY
Citation
Ls. Liao et al., PHOTOLUMINESCENCE FROM SI-BASED SINXOY FILMS, Chinese Science Bulletin, 43(2), 1998, pp. 124-126
Citations number
4
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Chinese Science Bulletin → ACNP
ISSN journal
10016538
Volume
43
Issue
2
Year of publication
1998
Pages
124 - 126
Database
ISI
SICI code
1001-6538(1998)43:2<124:PFSSF>2.0.ZU;2-C
Abstract
B+, C+, Si+, and As+ with dose of 5 x 10(16) cm(-2) were implanted int o SiNxOy films grown on crystalline silicon by plasma-enhanced chemica l vapor deposition. The ion-implanted samples exhibit their photolumin escence with different intensities and different peak wavelengths afte r thermal annealing. Especially, the C--implanted SiNxOy films show ve ry intense photoluminescence ar green-yellow color region.