EMPIRICAL CORRELATION BETWEEN AC KINK AND LOW-FREQUENCY NOISE OVERSHOOT IN SOI MOSFETS

Authors
TSENG YC HUANG WLM WELCH PJ FORD JM WOO JCS
Citation
Yc. Tseng et al., EMPIRICAL CORRELATION BETWEEN AC KINK AND LOW-FREQUENCY NOISE OVERSHOOT IN SOI MOSFETS, IEEE electron device letters, 19(5), 1998, pp. 157-159
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
19
Issue
5
Year of publication
1998
Pages
157 - 159
Database
ISI
SICI code
0741-3106(1998)19:5<157:ECBAKA>2.0.ZU;2-1
Abstract
Low-frequency (LF) noise overshoot has been empirically correlated wit h the frequency dependence of the kink effect in floating body SOI MOS FET's. Based on the correlation between these unique ac characteristic s in SOI, a new mechanism is proposed to explain the well-known kink-r elated noise overshoot. Also, device solutions for suppressing LF nois e overshoot will be discussed.