A LIGHT-EMITTING DEVICE USING A LATERAL JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS (311)A-ORIENTED SUBSTRATES

Authors
VACCARO PO OHNISHI H FUJITA K
Citation
Po. Vaccaro et al., A LIGHT-EMITTING DEVICE USING A LATERAL JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS (311)A-ORIENTED SUBSTRATES, Applied physics letters, 72(7), 1998, pp. 818-820
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
7
Year of publication
1998
Pages
818 - 820
Database
ISI
SICI code
0003-6951(1998)72:7<818:ALDUAL>2.0.ZU;2-O
Abstract
A lateral p-n junction allows direct injection of electrons and holes in the active layer of devices such as laser diodes and can reduce car rier relaxation time and increase modulation bandwidth. Light-emitting diodes were made on patterned GaAs (311)A-oriented substrates by usin g a lateral p-n junction formed in GaAs-silicon-doped epilayers grown by molecular beam epitaxy. Good electroluminescence at room temperatur e was obtained for both GaAs single layers and GaAs/ AlGaAs multiple q uantum well structures. (C) 1998 American Institute of Physics.