This letter presents a technique for determining carrier lifetimes, wh
ich does not require a fast detector or rely on an experimentally comp
lex implementation. The technique is based both on a measurement and a
parallel calculation: (1) A Hakki-Paoli [J. Appl. Phys. 44, 4113 (197
3)] measurement of modal gain versus current density, g (J), and (2) a
theoretical determination of the modal gain versus carrier sheet dens
ity, g(N). Once the gain relationships have been determined, the carri
er sheet density N can be functionally related to the current density
J and the lifetime determined. We demonstrate this method on two InGaA
s single quantum well lasers. This method may prove particularly usefu
l for carrier lifetime estimations in long-wavelength semiconductor la
sers. (C) 1998 American Institute of Physics.