Electrical and magnetic measurement results show that Rh2O3-I is a p-t
ype semiconductor showing temperature independent Pauli paramagnetism
above 200 K. Below 200 K, this oxide shows an increase in the magnetic
susceptibility with decreasing temperature, indicating a magnetic pha
se transition at 200 K. This transition is also reflected in the elect
rical resistivity measurements. (C) 1998 Elsevier Science Ltd.