A POSSIBLE METHOD FOR LARGE-AREA DEPOSIT ION OF A-SI-H THIN-FILMS USING ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Authors
LEE JH SHIM CM PARK SK JUNG DG PARK S
Citation
Jh. Lee et al., A POSSIBLE METHOD FOR LARGE-AREA DEPOSIT ION OF A-SI-H THIN-FILMS USING ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 295(1-2), 1997, pp. 67-72
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
295
Issue
1-2
Year of publication
1997
Pages
67 - 72
Database
ISI
SICI code
0040-6090(1997)295:1-2<67:APMFLD>2.0.ZU;2-C
Abstract
We have proposed a possible method to deposit a-Si:H thin films on the large area substrates using multi electron cyclotron resonance (ECR) sources. The thickness uniformity of 2.0% and surface roughness of 0.2 4 nm have been obtained from a-Si:H thin films deposited by this metho d. No particles have been observed from the surface of deposited a-Si: H thin films by atomic force microscopy. The results have shown the po ssibility that the proposed ECR plasma-enhanced chemical vapor deposit ion can be used for large area deposition of a-Si:H thin films for TFT -LCD application.