ALN THIN-FILM DEPOSITION BY PULSED-LASER ABLATION OF AL IN NH3

Aluminium nitride films were synthesized by reaction of laser-evaporat ed Al in NH3 atmosphere. Optical multichannel emission spectroscopy (O MA) and intensified charge coupled device (ICCD) imaging have been app lied to in situ identification of deposition precursors in the plasma plume moving from the target to the substrate. Mass spectrometry has a lso been used to detect ionic species ejected from an Al target in a m ixture with NH3. Thin films prepared by this method were characterized by conventional techniques such as Auger, energy dispersive analysis of X-ray (EDAX), scanning electron microscopy (SEM), and X-ray diffrac tion. Highly oriented films of AlN (100) on Si (100) were identified. (C) 1997 Elsevier Science S.A.