CHARACTERIZATION AND OPTIMIZATION OF ZINC-OXIDE FILMS BY RF MAGNETRONSPUTTERING

Citation
Kb. Sundaram et A. Khan, CHARACTERIZATION AND OPTIMIZATION OF ZINC-OXIDE FILMS BY RF MAGNETRONSPUTTERING, Thin solid films, 295(1-2), 1997, pp. 87-91
Citations number
24
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
295
Issue
1-2
Year of publication
1997
Pages
87 - 91
Database
ISI
SICI code
0040-6090(1997)295:1-2<87:CAOOZF>2.0.ZU;2-0
Abstract
Zinc oxide films were deposited by a r.f. magnetron sputtering using a zinc oxide target. The deposited films were characterized as a functi on of deposition temperature, pressure, argon-oxygen gas flow ratio, t arget-substrate distance. The deposition conditions were optimized to give good quality films suitable for the fabrication of surface acoust ic wave device. The films deposited at temperatures as low as 250 degr ees C yielded surface acoustic wave device quality. (C) 1997 Elsevier Science S.A.