Zinc oxide films were deposited by a r.f. magnetron sputtering using a
zinc oxide target. The deposited films were characterized as a functi
on of deposition temperature, pressure, argon-oxygen gas flow ratio, t
arget-substrate distance. The deposition conditions were optimized to
give good quality films suitable for the fabrication of surface acoust
ic wave device. The films deposited at temperatures as low as 250 degr
ees C yielded surface acoustic wave device quality. (C) 1997 Elsevier
Science S.A.