Cadmium telluride (CdTe) thin films were prepared by diode radio-frequ
ency sputtering from polycrystalline CdTe targets in an atmosphere of
argon, nitrogen and oxygen. The layers prepared in the presence of nit
rogen gas were amorphous and their oxygen contents increased with the
partial pressure of nitrogen. The evolution of the composition of the
layers as a function of the nitrogen partial pressure during depositio
n was followed by X-ray photoelectron spectroscopy. It is found that t
he oxygen is bound to both tellurium and cadmium atoms. The surface of
the CdTe thin films was also studied as a function of their exposure
time to a plasma containing a mixture of nitrogen and oxygen. It is fo
und that the oxygen contents of the surface increases with increased e
xposure time. Also, this exposure resulted in an increase of the oxide
thickness and a net decrease in the surface roughness of the films. (
C) 1997 Elsevier Science S.A.