OPTICAL-TRANSITIONS IN SI GE SUPERLATTICES

Citation
S. Erkoc et S. Katircioglu, OPTICAL-TRANSITIONS IN SI GE SUPERLATTICES, Thin solid films, 295(1-2), 1997, pp. 206-209
Citations number
12
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
295
Issue
1-2
Year of publication
1997
Pages
206 - 209
Database
ISI
SICI code
0040-6090(1997)295:1-2<206:OISGS>2.0.ZU;2-N
Abstract
We have performed self-consistent field calculations of the electronic structure of Si/Ge square-well superlattices within the effective-mas s theory. We have computed the optical transition matrix elements invo lving transitions from the hole states to states in the conduction ban d, and we have also computed the oscillator strength matrix elements f or the transitions between the states in the conduction band. (C) 1997 Elsevier Science S.A.