FABRICATION OF CADMIUM-OXIDE THIN-FILMS USING THE LANGMUIR-BLODGETT DEPOSITION TECHNIQUE

Citation
N. Matsuura et al., FABRICATION OF CADMIUM-OXIDE THIN-FILMS USING THE LANGMUIR-BLODGETT DEPOSITION TECHNIQUE, Thin solid films, 295(1-2), 1997, pp. 260-265
Citations number
24
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
295
Issue
1-2
Year of publication
1997
Pages
260 - 265
Database
ISI
SICI code
0040-6090(1997)295:1-2<260:FOCTUT>2.0.ZU;2-7
Abstract
Thin conducting cadmium oxide (CdO) films were fabricated from Langmui r-Blodgett Cd arachidate precursors through a combination of low tempe rature ultra-violet/ozone (UVO) decomposition and annealing treatments . The decomposition and oxidation of the UVO residue to CdO occurred b etween 220 to 300 degrees C, and was observed using in-situ laser refl ectivity and resistivity measurements. The final CdO film resistivitie s were in the 10(4)-10(5) Omega/square range, depending on annealing c onditions. Atomic force microscopy revealed nanometre-scale surface ro ughness in the final film, which most likely resulted in the lower con ductivity measured in the film as compared to bulk CdO fabrication tec hniques. (C) 1997 Elsevier Science S.A.