CONDUCTIVITY DEPENDENCE ON THE THICKNESS OF HYDROGENATED, AMORPHOUS SILICON-CARBON FILMS

We report experimental results on the dependence of conductivity on th ickness in hydrogenated amorphous silicon and hydrogenated amorphous s ilicon carbon thin film alloys. The analysis of multilayer structures indicates that band bending at the vacuum-him interface accounts for m ost of the conductivity changes. The film-substrate interface seems to play a minor role in the conductivity experiments. The behavior of th e sub-gap absorption coefficient of thin films shows that the material near the interfaces and in the bulk has the same defect density. (C) 1997 Elsevier Science S.A.