Sj. Youn et Bi. Min, HALF-METALLIC ELECTRONIC-STRUCTURES OF COLOSSAL MAGNETORESISTANCE MANGANESE OXIDES, Journal of the Korean Physical Society, 32(4), 1998, pp. 576-583
Using the virtual crystal approximation, we have studied electronic an
d magnetic properties of the colossal magnetoresistance (CMR) La1-xBax
MnO3 system at general doping concentrations. We have studied the chan
ge of the electronic structure and the Fermi surface topology as a fun
ction of the doping a: for 0.2 < x < 0.5, where the system is a ferrom
agnetic metal with cubic structure. La1-xBaxMnO3 system undergoes a ph
ase transition from a normal metallic ferromagnet to a half-metal at x
= 0.33 where the CMR is observed. We have also studied the effect of
the magnetic field and found that the magnetic field induces a half-me
tallic transition, and so enhances the magnetoresistance.