A NEW SPUTTERING DEVICE OF RADIOFREQUENCY MAGNETRON DISCHARGE USING ARECTANGULAR HOLLOW-SHAPED ELECTRODE

A new sputtering device using a radio-frequency magnetron discharge wi th a rectangular hollow-shaped electrode has been developed for a low- pressure discharge (similar to a few mTorr). The spatial structures of the electron density, the etching rate of the target material (copper ), and the deposition rate were measured in uniform and convex profile s of the externally applied magnetic field. The device realized the un iform use of the target material under the arrangement of the magnetic -field configuration. The resistivity of the deposited copper thin fil m was also obtained, which was found to be similar to that of conventi onal copper (similar to 10(-8) Ohm m). (C) 1998 American Institute of Physics. [S0034-6748(98)03304-8].