Y. Ohtsu et al., A NEW SPUTTERING DEVICE OF RADIOFREQUENCY MAGNETRON DISCHARGE USING ARECTANGULAR HOLLOW-SHAPED ELECTRODE, Review of scientific instruments, 69(4), 1998, pp. 1833-1836
A new sputtering device using a radio-frequency magnetron discharge wi
th a rectangular hollow-shaped electrode has been developed for a low-
pressure discharge (similar to a few mTorr). The spatial structures of
the electron density, the etching rate of the target material (copper
), and the deposition rate were measured in uniform and convex profile
s of the externally applied magnetic field. The device realized the un
iform use of the target material under the arrangement of the magnetic
-field configuration. The resistivity of the deposited copper thin fil
m was also obtained, which was found to be similar to that of conventi
onal copper (similar to 10(-8) Ohm m). (C) 1998 American Institute of
Physics. [S0034-6748(98)03304-8].