MONOLITHIC PYROELECTRIC INFRARED IMAGE SENSOR USING PVDF THIN-FILM

Authors
FUJITSUKA N SAKATA J MIYACHI Y MIZUNO K OHTSUKA K TAGA Y TABATA O
Citation
N. Fujitsuka et al., MONOLITHIC PYROELECTRIC INFRARED IMAGE SENSOR USING PVDF THIN-FILM, Sensors and actuators. A, Physical, 66(1-3), 1998, pp. 237-243
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
66
Issue
1-3
Year of publication
1998
Pages
237 - 243
Database
ISI
SICI code
0924-4247(1998)66:1-3<237:MPIISU>2.0.ZU;2-7
Abstract
A 16x16 monolithic pyroelectric infrared image sensor has been develop ed. The image sensor utilizes an electro-spray (ESP)-deposited polyvin ylidene fluoride (PVDF) thin film as a pyroelectric material, a buried -channel MOSFET as a low-noise detection device, and a micromachined m embrane supported by four beams as a thermal isolation structure. A vo ltage sensitivity of 6600 V W-1 and a detectivity of 1.6 x 10(7) cm Hz (1/2) W-1 have been realized with a sensing area of 75 mu m x 75 mu m (C) 1998 Elsevier Science S.A. All rights reserved.