INFLUENCE OF RESIDUAL POINT-DEFECT SUPERSATURATION ON THE FORMATION OF GROWN-IN OXIDE PRECIPITATE NUCLEI IN CZ-SI

Density spectra of grown-in oxide precipitate nuclei were measured alo ng the radius of a silicon wafer with a stacking fault ring. A first-o rder approximation model allows us to explain the experimental observa tions. By fitting growth rate curves to the defect density spectra, th e residual point defect supersaturation present during formation of ox ide precipitate nuclei can be estimated. We show that the ring region is the region where the vacancy supersaturation remains subcritical an d no vacancy agglomeration occurs, resulting in the highest residual v acancy supersaturation, and finally leading to the largest grown-in ox ide precipitate nuclei. These nuclei first reach the critical size for stacking fault formation during subsequent thermal treatments.