ULTRALOW-THRESHOLD (50 A CM(2)) STRAINED SINGLE-QUANTUM-WELL GAINASSB/ALGEASSB LASERS EMITTING AT 2.05 MU-M/

Authors
TURNER GW CHOI HK MANFRA MJ
Citation
Gw. Turner et al., ULTRALOW-THRESHOLD (50 A CM(2)) STRAINED SINGLE-QUANTUM-WELL GAINASSB/ALGEASSB LASERS EMITTING AT 2.05 MU-M/, Applied physics letters, 72(8), 1998, pp. 876-878
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
8
Year of publication
1998
Pages
876 - 878
Database
ISI
SICI code
0003-6951(1998)72:8<876:U(ACSS>2.0.ZU;2-Y
Abstract
Strained single-quantum-well, broadened-waveguide GaInAsSb/AlGaAsSb di ode lasers have exhibited room-temperature threshold current densities as low as 50 A/cm(2), one of the lowest values reported for diode las ers at room temperature, These lasers, grown by molecular beam epitaxy , have emission wavelengths of similar to 2.05 mu m, characteristic te mperature of 65 K, internal quantum efficiency of 95%, and internal lo ss coefficient of 7 cm(-1). Single-ended cw power of 1 W is obtained f or a 100-mu m aperture. (C) 1998 American Institute of Physics.