SECONDARY-ION YIELD CHANGES ON RIPPLED INTERFACES

Citation
Ma. Makeev et Al. Barabasi, SECONDARY-ION YIELD CHANGES ON RIPPLED INTERFACES, Applied physics letters, 72(8), 1998, pp. 906-908
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
8
Year of publication
1998
Pages
906 - 908
Database
ISI
SICI code
0003-6951(1998)72:8<906:SYCORI>2.0.ZU;2-I
Abstract
Sputter erosion often leads to the development of surface ripples. Her e we investigate the effect of the ripples on the secondary ion yield, by calculating the yield as a function of the microscopic parameters characterizing the ion cascade (such as penetration depth, widths of t he deposited energy distribution) and the ripples (ripple amplitude, w avelength), We find that ripples can strongly enhance the yield, with the magnitude of the effect depending on the interplay between the ion and ripple characteristics. Furthermore, pre compare our predictions with existing experimental results. (C) 1998 American Institute of Phy sics.