DEFECT-INDUCED LOWERING OF ACTIVATION-ENERGIES AT STEP BANDS IN CO CU(100)/

Complex topological features such as rectangular voids and step inclus ions that were seen in secondary electron micrographs of Co films grow n on Cu(100) at room temperature were reproduced in Monte Carlo simula tions in the presence of step bands. Lowered activation energies at de fects such as steps, kinks, and vacancies enhance step edge restructur ing during growth and upon annealing, This results in features such as faceted step edges, rectangular pits, incorporation of Co into terrac es, surface alloying, and surface segregation. Simulated growth struct ures are directly compared with those observed in an ultrahigh vacuum scanning transmission electron microscope. (C) 1998 American Institute of Physics.