REGULAR STEP ARRAYS ON SILICON

Authors
VIERNOW J LIN JL PETROVYKH DY LEIBSLE FM MEN FK HIMPSEL FJ
Citation
J. Viernow et al., REGULAR STEP ARRAYS ON SILICON, Applied physics letters, 72(8), 1998, pp. 948-950
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
8
Year of publication
1998
Pages
948 - 950
Database
ISI
SICI code
0003-6951(1998)72:8<948:RSAOS>2.0.ZU;2-1
Abstract
Highly regular arrays of steps are produced on vicinal Si(111)7x7. The step edges are atomically straight for up to 2x10(4) lattice sites. T he terraces are single domain, which produces a minimum kink width of 2.3 nm (half a 7x7 unit cell) and thus a high barrier for creating kin ks. Criteria for obtaining optimum step arrays are established, such a s the miscut [approximate to 1 degrees towards (<(11)over bar>2)] and an annealing sequence which passes through step bunching regions quick ly. (C) 1998 American Institute of Physics.