A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND ATOMIC-FORCE MICROSCOPY STUDY OF THE CHEMICAL BEAM EPITAXIAL-GROWTH OF INAS AND INP ISLANDS ON (001)GAP

Pie have studied the formation of strained InAs and InP island structu res on GaP surfaces grown by chemical beam epitaxy. InP grows pseudomo rphically for 3 ML before island crystallization is observed by reflec tion high-energy electron diffraction, following a typical Stranski-Kr astanov growth mode. For the growth of In.4s on GaP, three-dimensional diffraction peaks are observed after 0.9 ML of InAs have been deposit ed, indicating a Volmer-Weber growth mode. Atomic force microscopy stu dies of these structures are presented and the optical properties are discussed. (C) 1998 American Institute of Physics.