GROWTH OF SINGLE-PHASE PRBA0.7SR1.3CU3O7 THIN-FILMS AND THE ROLE OF LATTICE STRAIN ON THE TRANSPORT-PROPERTIES

Authors
ZHAO YG DONG ZW RAJESWARI M SHARMA RP VENKATESAN T
Citation
Yg. Zhao et al., GROWTH OF SINGLE-PHASE PRBA0.7SR1.3CU3O7 THIN-FILMS AND THE ROLE OF LATTICE STRAIN ON THE TRANSPORT-PROPERTIES, Applied physics letters, 72(8), 1998, pp. 981-983
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
8
Year of publication
1998
Pages
981 - 983
Database
ISI
SICI code
0003-6951(1998)72:8<981:GOSPTA>2.0.ZU;2-7
Abstract
Single-phase PrBa0.7Sr1.3Cu3O7 thin films with the Sr dopant concentra tion exceeding the solid solubility limit were epitaxially grown on (0 01) SrTiO3 and (001) LaAlO3 substrates by pulsed laser deposition (PLD ) method. The resistivity of the doped films grown on LaAlO3 was signi ficantly lower than that of PrBa2Cu3O7. For most of the films grown on SrTiO3, the resistivity was higher than that of PrBa2Cu3O7. The resul ts were explained by considering the Sr-doping effect and lattice-mism atch-induced strain effect. This work shows the potential of PLD to gr ow single-phase films with the dopant concentration exceeding the soli d solubility limit. (C) 1998 American Institute of Physics.