The models used to describe zinc oxide-based varistors rely on diffusi
on and defect data obtained using techniques that have been replaced b
y more modern methods such as secondary ion mass spectrometry, We repo
rt values for oxygen diffusivities in undoped, single-crystal ZnO as a
function of temperature and orientation. Evaporation was taken into c
onsideration when analyzing experimental results. Within experimental
error, the energetics of diffusion are isotropic, but are slightly fas
ter in the c-direction, In comparing diffusion data from the literatur
e, the intrinsic activation energy was estimated to be between 3.6 and
4.2 eV. Comparisons with recent theoretical calculations of relevant
defect energies are discussed.