The same band dispersions as those obtained from crystalline Si along
the Gamma Delta-X symmetry line are first observed from photoluminesce
nt porous Si independent of its microstructure and porosity using an a
ngle-resolved photoemission technique. The electronic structures of po
rous Si observed in the normal photoemission, valence photoemission, a
nd L-edge x-ray absorption spectra are interpreted consistently to res
ult from the overlap of that of bulk crystalline Si and that relating
to the receding valence structure, which is suggested experimentally t
o be linked to the luminescence origin.