Al/ZnSe(100) Schottky barriers fabricated on c(2 X 2), 2 X 1, and 1 X
1 reconstructed surfaces were studied by means of photoemission spectr
oscopy and first-principles calculations. Relatively similar values of
the Schottky barriers were found for interfaces fabricated on Zn-stab
ilized c(2 X 2) and Se-dimerized 2 x 1 surfaces, while substantially l
ower values of the p-type barriers were predicted theoretically and ob
served experimentally for junctions grown on the Se-rich 1 X 1 surface
. [S0163-1829(98)51716-X].