ALZNSE(100) SCHOTTKY-BARRIER HEIGHT VERSUS INITIAL ZNSE SURFACE RECONSTRUCTION

Citation
M. Lazzarino et al., ALZNSE(100) SCHOTTKY-BARRIER HEIGHT VERSUS INITIAL ZNSE SURFACE RECONSTRUCTION, Physical review. B, Condensed matter, 57(16), 1998, pp. 9431-9434
Citations number
19
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
16
Year of publication
1998
Pages
9431 - 9434
Database
ISI
SICI code
0163-1829(1998)57:16<9431:ASHVIZ>2.0.ZU;2-U
Abstract
Al/ZnSe(100) Schottky barriers fabricated on c(2 X 2), 2 X 1, and 1 X 1 reconstructed surfaces were studied by means of photoemission spectr oscopy and first-principles calculations. Relatively similar values of the Schottky barriers were found for interfaces fabricated on Zn-stab ilized c(2 X 2) and Se-dimerized 2 x 1 surfaces, while substantially l ower values of the p-type barriers were predicted theoretically and ob served experimentally for junctions grown on the Se-rich 1 X 1 surface . [S0163-1829(98)51716-X].