BALLISTIC-ELECTRON-EMISSION MICROSCOPY ON AU-GAAS SCHOTTKY DIODES USING INAS TIPS

In this paper, ballistic-electron-emission microscopy (BEEM) experimen ts with n-doped InAs tips are reported. The BEEM spectra obtained with these tips show a clearly different spectral behavior compared to ref erence curves measured with Au tips. Using an extended Bell-Kaiser mod el, the BEEM spectra were calculated both for Au and InAs tips. For In As tips, excellent agreement between the measured and calculated BEEM spectra is only obtained if parallel momentum conservation is assumed bath at the Au-GaAs interface and for the tunneling processes between the InAs tip and the Au film. In addition, scattering inside the Au fi lm is found to play a major role. [S0163-1829(98)05307-7].