ELECTRICAL-ACTIVITY OF INTERFACIAL PARAMAGNETIC DEFECTS IN THERMAL (100)-SI SIO2/

The correlation be tween the detrimental electrically active interface traps and the electron-spin-resonance-active point defects P-b0 and P -b1 (unpaired Si orbitals) was studied through controlled variation, b oth relatively and absolutely, of the defect bath densities. Unlike pr evious inference, no electrical activity of P-b1 as an interface state could be traced, thus questioning its relevance for device fabricatio n, while all P-b0's appear active. A fundamental reason is inferred as to why the (100) Si surface dominates device fabrication. [S0163-1829 (98)03211-1].