IMAGING GA TETRAMERS ON AG(001) BY SCANNING-TUNNELING-MICROSCOPY - THEORY AND EXPERIMENT

Citation
De. Burgler et al., IMAGING GA TETRAMERS ON AG(001) BY SCANNING-TUNNELING-MICROSCOPY - THEORY AND EXPERIMENT, Physical review. B, Condensed matter, 57(16), 1998, pp. 10035-10043
Citations number
44
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
16
Year of publication
1998
Pages
10035 - 10043
Database
ISI
SICI code
0163-1829(1998)57:16<10035:IGTOAB>2.0.ZU;2-F
Abstract
Very recently, we obtained well-resolved scanning tunneling microscopy (STM) images of what appear to be Ga tetramers on Ag(001). To clarify this finding, we apply two related semiempirical theoretical techniqu es [atom superposition electron delocalization (ASED) and electronic s cattering quantum chemistry (ESQC)], previously applied with success t o other adsorbate systems, to single Ga adatoms and Ga tetramers adsor bed on Ag(001). The dependence of STM images on the bonding site and o n various tip configurations is computed by the ESQC method. These sim ulations agree with the observed STM images confirming the tetramer mo del, but show no clearcut bonding-site dependence, and hence do not al low a determination of the Ga adsorption site by comparison with exper imental STM images alone. However, ASED calculations for a single Ga a datom yield an adsorption energy for the fourfold hollow site which is about 1 eV higher than for the bridge and top sites, indicating that the hollow site is also the preferred bonding site for Ga adatoms form ing a tetramer. [S0163-1829(98)05116-9].