De. Burgler et al., IMAGING GA TETRAMERS ON AG(001) BY SCANNING-TUNNELING-MICROSCOPY - THEORY AND EXPERIMENT, Physical review. B, Condensed matter, 57(16), 1998, pp. 10035-10043
Very recently, we obtained well-resolved scanning tunneling microscopy
(STM) images of what appear to be Ga tetramers on Ag(001). To clarify
this finding, we apply two related semiempirical theoretical techniqu
es [atom superposition electron delocalization (ASED) and electronic s
cattering quantum chemistry (ESQC)], previously applied with success t
o other adsorbate systems, to single Ga adatoms and Ga tetramers adsor
bed on Ag(001). The dependence of STM images on the bonding site and o
n various tip configurations is computed by the ESQC method. These sim
ulations agree with the observed STM images confirming the tetramer mo
del, but show no clearcut bonding-site dependence, and hence do not al
low a determination of the Ga adsorption site by comparison with exper
imental STM images alone. However, ASED calculations for a single Ga a
datom yield an adsorption energy for the fourfold hollow site which is
about 1 eV higher than for the bridge and top sites, indicating that
the hollow site is also the preferred bonding site for Ga adatoms form
ing a tetramer. [S0163-1829(98)05116-9].