ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY STUDY OF THE INP(100)-(2X4)SURFACE ELECTRONIC-STRUCTURE

The InP(100)-(2 x 4) surface electronic structure was studied using an gle-resolved photoelectron spectroscopy together with synchrotron radi ation. We identify three surface states occurring in the gaps of the p rojected bulk bands. The highest level state, located at binding energ y E-B = 1.0 eV, is consistent with previous findings. The second and t hird states, located at E-B = 1.8 and 4.3 eV, have not been reported p reviously. All three of these surface states show no discernible dispe rsion as compared to the surface states on InAs(100)-(2x4) and GaAs(10 0)-(2x4). This result suggests that the elements of the InP(100)-(2x4) surface unit cells are more isolated from each other than they are fo r the InAs(100)-(2x4) or the GaAs(100)-(2x4) surface.