THE INFLUENCE OF TENSILE STRAIN ON DIFFERENTIAL GAIN AND AUGER RECOMBINATION IN 1.5-MU-M MULTIPLE-QUANTUM-WELL LASERS

Citation
G. Jones et al., THE INFLUENCE OF TENSILE STRAIN ON DIFFERENTIAL GAIN AND AUGER RECOMBINATION IN 1.5-MU-M MULTIPLE-QUANTUM-WELL LASERS, IEEE journal of quantum electronics, 34(5), 1998, pp. 822-833
Citations number
33
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
34
Issue
5
Year of publication
1998
Pages
822 - 833
Database
ISI
SICI code
0018-9197(1998)34:5<822:TIOTSO>2.0.ZU;2-X
Abstract
A systematic study has been undertaken including growth, characterizat ion, and modeling of tensile-strained multiple-quantum-well (MQW) lase rs with emission wavelengths in the neighborhood of 1.5 mu m. The lase r threshold increases between 0% and -0.5% mismatch, switching from TE to TM polarized emission at -0.5%, then decreases to -1.3% mismatch, with TM polarized emission. The threshold current density has a much w eaker dependence on inverse cavity length in the highly tensile-strain ed lasers than has previously been observed for lattice-matched and co mpressive lasers emitting in the same wavelength range. We present the oretical calculations which show that the observed differences are wel l explained, both qualitatively and quantitatively, by the calculated variation with strain of the optical confinement factor Gamma and the differential gain at transparency, dg/dn (n(tr)). More detailed compar ison with experiment suggests that Auger recombination provides the do minant contribution to the threshold current density. Estimated Auger coefficients C are in good agreement with those previously obtained us ing other techniques.