LDMOS TRANSISTOR POWERS PCS BASE-STATION AMPLIFIERS

Authors
Citation
A. Wood, LDMOS TRANSISTOR POWERS PCS BASE-STATION AMPLIFIERS, Microwaves & RF, 37(4), 1998, pp. 77
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic",Telecommunications
Journal title
ISSN journal
07452993
Volume
37
Issue
4
Year of publication
1998
Database
ISI
SICI code
0745-2993(1998)37:4<77:LTPPBA>2.0.ZU;2-2
Abstract
POWER amplifiers for personal-communications-services (PCS) base-stati on applications in the 1.8-to-2.2-GHz frequency range must deliver a c ombination of high gain and high linearity in order to satisfy the str ingent performance requirements of modern transmission standards such as Global System for Mobile Communications (GSM), code-division multip le access (CDMA), and North American Digital Cellular (NADC). In fact, amplifiers may be required to boost multiple signals of the same form at or a combination of formats. The MRF286 laterally diffused metal-ox ide-semiconductor (LDMOS) power transistor from Motorola, Inc, (Phoeni x, AZ) delivers a peak envelope power (PEP) of 60 W with a correspondi ng 10.5-dB gain and -31-dBc intermodulation-distortion (IMD) level whe n used in Class AB from 1.93 to 1.99 GHz. This conclusion of a two-par t article examines the performance of the MRF286 in the GSM, CDMA, and NADC operating formats.