BEO PACKAGES HOUSE HIGH-POWER COMPONENTS - BEO PACKAGES, PART 2

Authors
SEPULVEDA JL SIGLIANO R
Citation
Jl. Sepulveda et R. Sigliano, BEO PACKAGES HOUSE HIGH-POWER COMPONENTS - BEO PACKAGES, PART 2, Microwaves & RF, 37(4), 1998, pp. 107
Citations number
1
Categorie Soggetti
Engineering, Eletrical & Electronic",Telecommunications
Journal title
Microwaves & RF → ACNP
ISSN journal
07452993
Volume
37
Issue
4
Year of publication
1998
Database
ISI
SICI code
0745-2993(1998)37:4<107:BPHHC->2.0.ZU;2-O
Abstract
LAST month, the first half of this article reviewed some of the most d esirable material characteristics for high-frequency, high-power packa ging, Beryllium oxide (BeO) was seen as a good package material due to its high thermal conductivity (k) and intermediate coefficient of the rmal expansion (CTE) that matches GaAs as well as silicon substrates a nd integrated circuits (ICs).