QUASI-2-DIMENSIONAL SIMULATION OF DUAL-GATE PSEUDOMORPHIC HETEROJUNCTION FIELD-EFFECT TRANSISTORS

A quasi-two-dimensional model was performed for the analysis of dual-g ate heterojunction field effect transistors. It constitutes a versatil e tool for the understanding of transistor physical behavior and devic e optimization difficult to perform due to the large number of paramet ers to consider. The DC characteristics and the variations of the equi valent circuit elements under cascode configuration can be predicted v s, the different biases. A comparison between physical two-dimensional simulation and experiment results allows us to validate this approach . (C) 1998 John Wiley & Sons, Inc.