DOUBLE-CRYSTAL X-RAY-DIFFRACTION STUDIES ON CHLORIDE-VPE GROWN GAXIN1-XAS LAYERS WITH DIFFERENT GA-TO-IN RATIO

Authors
PAL R AGARWAL SK PAL D BOSE DN
Citation
R. Pal et al., DOUBLE-CRYSTAL X-RAY-DIFFRACTION STUDIES ON CHLORIDE-VPE GROWN GAXIN1-XAS LAYERS WITH DIFFERENT GA-TO-IN RATIO, Materials research bulletin, 32(5), 1997, pp. 589-594
Citations number
15
Categorie Soggetti
Material Science
Journal title
Materials research bulletin → ACNP
ISSN journal
00255408
Volume
32
Issue
5
Year of publication
1997
Pages
589 - 594
Database
ISI
SICI code
0025-5408(1997)32:5<589:DXSOCG>2.0.ZU;2-7
Abstract
In this paper we present the results of the growth of GaxIn1-xAs epila yers using Ga-ln alloy sources by chloride vapor phase epitaxial techn ique. The amount of indium incorporated in the epilayers with alloy so urce composition ranging from 3 to 12 atomic percentage (at%) of Ga is studied. Double crystal X-ray diffractometry (DXRD) has been used to characterize the epitaxial layers. Copyright (C) 1997 Elsevier Science Ltd.