TRULY OHMIC CONTACTS IN ENGINEERED AL SI/INGAAS(001) DIODES/

Authors
DEFRANCESCHI S BELTRAM F MARINELLI C SORBA L LAZZARINO M MULLER BH FRANCIOSI A
Citation
S. Defranceschi et al., TRULY OHMIC CONTACTS IN ENGINEERED AL SI/INGAAS(001) DIODES/, Applied physics letters, 72(16), 1998, pp. 1996-1998
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
16
Year of publication
1998
Pages
1996 - 1998
Database
ISI
SICI code
0003-6951(1998)72:16<1996:TOCIEA>2.0.ZU;2-M
Abstract
We report the fabrication of nonalloyed ohmic contacts on n-InxGa1-xAs (0.25 less than or equal to x less than or equal to 0.38) grown by mo lecular beam epitaxy (MBE) on GaAs(001), This result is obtained by su ppression of the native Al/InGaAs Schottky barrier by means of the MBE growth of Si bilayers at the metal-semiconductor interface. Truly ohm ic contacts are demonstrated by x-ray photoemission spectroscopy and c urrent-voltage techniques. (C) 1998 American Institute of Physics.