ELECTRICAL-PROPERTIES OF SEMICONDUCTIVE NB-DOPED BATIO3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
NAGANO D FUNAKUBO H SHINOZAKI K MIZUTANI N
Citation
D. Nagano et al., ELECTRICAL-PROPERTIES OF SEMICONDUCTIVE NB-DOPED BATIO3 THIN-FILMS PREPARED BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 72(16), 1998, pp. 2017-2019
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
16
Year of publication
1998
Pages
2017 - 2019
Database
ISI
SICI code
0003-6951(1998)72:16<2017:EOSNBT>2.0.ZU;2-I
Abstract
Epitaxially grown semiconductive Nb-doped BaTiO3 thin films with low e lectrical resistivity similar to that of the bulk single crystal were prepared by metal-organic chemical-vapor deposition. Thin films with 1 .5-7.5 at. % Nb content showed n-type semiconductor character. The fil ms with 5.7 at. % Nb content showed the lowest resistivity, 2.8X10(-2) Ohm cm. This value is three orders of magnitude lower than those repo rted for sintered of Nb-doped BaTiO3, and similar to that of Nb-doped BaTiO3 single crystals. (C) 1998 American Institute of Physics.