ANTI-STOKES LUMINESCENCE IN NITROGEN-DOPED GAAS1-XPX ALLOYS

Citation
A. Meftah et al., ANTI-STOKES LUMINESCENCE IN NITROGEN-DOPED GAAS1-XPX ALLOYS, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1(1), 1998, pp. 35-38
Citations number
12
Categorie Soggetti
Physics, Applied
ISSN journal
12860042
Volume
1
Issue
1
Year of publication
1998
Pages
35 - 38
Database
ISI
SICI code
1286-0042(1998)1:1<35:ALINGA>2.0.ZU;2-N
Abstract
In indirect band gap GaAs1-xPx alloys, the Nx levels of the excitons b ound to nitrogen have been resonantly excited. The detection of the ph otoluminescence (PL) at energies greater than the excitation energy (A nti-Stokes Luminescence (ASL)) shows a new PL band which appears at te mperatures lower than 40 K. Its mean energy 2.205 eV is nearly indepen dent of the alloy composition. We investigate ASL as a function of exc itation photon energy, excitation power and temperature. Moreover ASL has been time resolved.