MODELING OF DIODE FORWARD RECOVERY CHARACTERISTICS USING A MODIFIED CHARGE-CONTROL EQUATION

The standard mathematical diode model currently used in most commercia l circuit simulators such as SPICE is not able to account for the forw ard recovery characteristics. This is due to the quasi-static diffusio n charge equation and the fixed internal resistance used in the model. A proposed modification to the charge equation is presented in this p aper. This important modification together with a proposed charge-depe ndent internal resistance equation have been test-implemented in SPICE and Saber. It has been experimentally verified that the new model is able to describe the diode forward recovery behaviour more realistical ly without degrading the convergence properties of the simulators.