Mj. Beeching et Aec. Spargo, INVERSION OF NONPERIODIC WAVE-FIELDS TO DETERMINE LOCALIZED DEFECT STRUCTURE, Journal of Microscopy, 190, 1998, pp. 262-266
A methodology for obtaining high-resolution crystal structure potentia
l distributions from electron microscope images of defects is examined
using image simulation methods. The technique is based on the inversi
on of the multislice procedure when extended to nonperiodic potentials
, The sensitivity of the method to the defect model and position in th
e crystal is examined briefly with the preliminary conclusion that thi
s should not severely limit the applicability of the method. The major
impediment for the successful experimental application of the method
to the detection and structure determination of single, isolated self-
interstitial defects in silicon is likely to be the preparation and fi
xation of the surfaces of the specimen.