The interaction between a surface acoustic wave (SAW) and the excitoni
c photoluminescence (PL) in GaAs SAW structures is investigated. The d
ependence of the PL on the SAW amplitude and illumination intensity is
explained by a simple model based on the field-induced ionization of
the excitons and on the screening of the SAW electric field by photoge
nerated carriers, Microscopic PL constitutes a powerful technique for
spatially resolving electric-field distributions in SAW structures. (C
) 1998 American Institute of Physics.