Mm. Garcia et al., X-RAY-ABSORPTION SPECTROSCOPY AND ATOMIC-FORCE MICROSCOPY STUDY OF BIAS-ENHANCED NUCLEATION OF DIAMOND FILMS, Applied physics letters, 72(17), 1998, pp. 2105-2107
The bias-enhanced nucleation of diamond on Si(100) has been studied by
x-ray absorption near-edge spectroscopy (XANES) and atomic force micr
oscopy, two techniques well suited to characterize nanometric crystall
ites. Diamond nuclei of similar to 15 nm are formed after 5 min of bia
s-enhanced treatment. The number of nuclei and its size increases with
the time of application of the bias voltage. A nanocrystalline diamon
d film is attained after 20 min of bias-enhanced nucleation. At the in
itial nucleation stages, the Si substrate appears covered with diamond
crystallites and graphite, without SiC being detected by XANES. (C) 1
998 American Institute of Physics.