DEEP LEVELS AND MINORITY-CARRIER LIFETIME IN PROTON-IRRADIATED SILICON PIN DIODE

Deep levels induced by MeV-proton irradiation in n(-)(nu) region of Si p-nu-n diodes were investigated by photocapacitance method under cons tant capacitance condition. Electrical property, dosage dependence, sp atial distribution, and annealing behavior of the deep levels were stu died. Carrier lifetime reduction in pin diodes by the deep level was e xamined by current-voltage characteristics and impedance measurements. From proton dosage dependence and annealing effect, the decreasing be havior of minority carrier lifetime with increasing deep level density was revealed. (C) 1998 American Institute of Physics.