BAND DISCONTINUITIES AND LOCAL INTERFACE COMPOSITION IN BETE ZNSE HETEROSTRUCTURES/

Using photoelectron spectroscopy, we have investigated the band alignm ent at the interface of pseudomorphic BeTe/ZnSe(100) heterojunctions f or different interface terminations. The heterostructures of high stru ctural quality have been produced by molecular beam epitaxy; the inter face termination was adjusted by variation of the growth parameters be tween the growth process of ZnSe and BeTe. The valence band offset for a Zn-rich BeTe/ZnSe interface is determined to be 1.26+/-0.15 eV, for the Se-rich BeTe/ZnSe interface a value of 0.46+/-0.15 eV is obtained . Our results show that the band alignment can be modified by the inte rface composition even for isovalent heterostructures. (C) 1998 Americ an Institute of Physics.