ORIENTATION DEPENDENCE OF STRAINED ZNSE ZNS(H11) SINGLE-QUANTUM-WELL LUMINESCENCE/

Pseudomorphic ZnSe/ZnS single quantum well (SQW) structures have been grown on Gap substrates with high Miller indices. Samples with differe nt crystallographic axis, grown under similar experimental conditions, exhibit different thicknesses, since the growth rate of a crystal fac et is axis dependent. The optical properties of ZnSe/ZnS(h11) single q uantum wells have been successfully related to the axis orientation th rough a finite square well potential model. Optical transitions in ZnS e SQWs are dominated by the axis dependence of the heavy-hole effectiv e masses. Furthermore, calculations concerning the piezoelectric effec t show that the quantum confined Stark effect is almost negligible for 1-2 monolayers thick wells. (C) 1998 American Institute of Physics.