INTERFACIAL INTERMIXING AND ARSENIC INCORPORATION IN THIN INP BARRIERS EMBEDDED IN IN0.53GA0.47AS

In0.53Ga0.47As/InP/In0.53Ga0.47As heterostructures with InP barrier wi dths between 2 and 20 nm, grown by metal-organic chemical-vapor deposi tion (MOCVD), were analyzed with respect to interfacial intermixing an d As incorporation in the InP. Raman scattering in conjunction with sp ectroscopic ellipsometry revealed the formation of intermixed (InGa)(A sP) interface layers with a width of about 2 nm. A second effect to be distinguished from interfacial intermixing was detected by the same e xperimental techniques, namely, the incorporation of As into the InP a t an almost constant concentration for InP layer thicknesses up to at least 20 nm. The cross incorporation of As into the InP was attributed to memory effects in the MOCVD growth system. (C) 1998 American Insti tute of Physics.