ANALYSIS OF THE IMPEDANCE RESPONSE DUE TO SURFACE-STATES AT THE SEMICONDUCTOR SOLUTION INTERFACE/

Citation
Pm. Hoffmann et al., ANALYSIS OF THE IMPEDANCE RESPONSE DUE TO SURFACE-STATES AT THE SEMICONDUCTOR SOLUTION INTERFACE/, Journal of applied physics, 83(8), 1998, pp. 4309-4323
Citations number
37
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
83
Issue
8
Year of publication
1998
Pages
4309 - 4323
Database
ISI
SICI code
0021-8979(1998)83:8<4309:AOTIRD>2.0.ZU;2-E
Abstract
Electronic surface states at semiconductor/solution interfaces can med iate processes such as trapping and detrapping of majority and minorit y charge carriers, recombination, or charge transfer to or from the so lution. We have calculated the complete impedance response due to thes e processes using a kinetic approach. Specific cases are discussed and diagnostic parameters for the capacitance and conductance are present ed. Experimental results on n-Si(111) in fluoride solutions are used t o illustrate the obtained expressions. (C) 1998 American Institute of Physics.