Gq. Zhang et al., THE THRESHOLD EFFECT OF INCIDENT LIGHT-INTENSITY FOR THE PHOTOREFRACTIVE LIGHT-INDUCED SCATTERING IN LINBO3-FE,M (M = MG2+, ZN2+, IN3+) CRYSTALS, Journal of applied physics, 83(8), 1998, pp. 4392-4396
Based on the two-center model and the multi-three-wave mixing model, w
e theoretically study the possible origins of the threshold effect of
the incident light intensity for the photorefractive light-induced sca
ttering in LiNbO3:Fe,M, (M=Mg2+, Zn2+, In3+) crystals. Our results sho
w that the value of the threshold intensity of incident light is stron
gly dependent on the dark conductivity of the crystal, and the maximum
total fanning noise is dependent on the concentration of Fe ion on th
e Li site. These two factors together determine the threshold behavior
of incident light intensity for the photorefractive light-induced sca
ttering in LiNbO3:Fe,M crystals when the incident light intensity is i
n moderate range. (C) 1998 American Institute of Physics.