Ms. Haque et al., COMPARISON OF INFRARED, RAMAN, PHOTOLUMINESCENCE, AND X-RAY PHOTOELECTRON-SPECTROSCOPY FOR CHARACTERIZING ARC-JET-DEPOSITED DIAMOND FILMS, Journal of applied physics, 83(8), 1998, pp. 4421-4429
Impurities and growth-related defect structures are mainly responsible
for low thermal conductivity of chemical vapor deposited diamond film
s. Different quality are-jet-deposited, free-standing diamond samples
were obtained from industry. Fourier transform infrared (FTIR), Raman,
and x-ray photoelectron spectroscopy (XPS) were used to determine the
quality of these samples. The nondiamond carbon was estimated from th
e 1560 cm(-1) broad peak intensity, the CHx integrated peak absorbance
, and the C-1s, plasmon loss features for Raman, FTIR, and XPS studies
, respectively. The diamond quality was also determined from the Raman
diamond peak full width at half maximum (FWHM) and XPS valence band s
pectra. It was observed that the higher the hydrogen content (determin
ed by FTIR), the darker the color of the film, the larger the nondiamo
nd 1560 cm(-1) peak intensity, and the larger the FWHM of the Raman di
amond peak at 1332 cm(-1) Negligible difference in the C-1s, diamond b
ulk plasmon loss peak was observed for films of wide ranging quality.
The FTIR CHx band exhibited the highest sensitivity to film quality. I
mpurity-related peaks were observed in the one phonon region of the FT
IR spectra and the photoluminescence spectra. The photoluminescence ba
ckground peak centered at 2.0 eV was found to be strongly related to n
ondiamond carbon impurities. It is shown that a combination of differe
nt analytical tools is required to determine diamond quality. (C) 1998
American Institute of Physics.